Ba2NdInTe5
semiconductorBa2NdInTe5 is a quaternary semiconductor compound combining barium, neodymium, indium, and tellurium—a rare-earth-bearing chalcogenide material primarily explored in research and laboratory settings rather than established commercial production. This material family is investigated for potential applications in thermoelectric devices, photovoltaic absorbers, and infrared optics, where the incorporation of rare-earth elements and heavy tellurium anions can influence bandgap engineering and charge-carrier behavior. While not yet widely deployed in industry, Ba2NdInTe5 represents the broader class of complex semiconductors being studied to achieve improved thermoelectric efficiency or specialized optical performance in niche applications where conventional materials fall short.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | lb/in³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Magnetic Moment(μB) | — | µB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |