Ba2InYTe5

semiconductor

· Ba2InYTe5

Ba2InYTe5 is a ternary semiconductor compound combining barium, indium, yttrium, and tellurium in a mixed-metal chalcogenide structure. This is a research-phase material studied for its potential as a wide-bandgap semiconductor, particularly for optoelectronic and photovoltaic applications where telluride-based compounds offer tunable electronic properties and radiation hardness advantages over conventional semiconductors.

experimental semiconductorsradiation-hard electronicsinfrared photovoltaicshigh-energy physics detectorssolar cells (emerging)optoelectronic research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.360	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2InYTe5

Electrical Properties

Regulatory Screening

Environmental

Export Control