Ba2InSmTe5 is a quaternary chalcogenide semiconductor compound composed of barium, indium, samarium, and tellurium. This material belongs to the family of rare-earth-containing metal tellurides, which are primarily investigated for thermoelectric and optoelectronic applications in research and development settings. The incorporation of rare-earth elements (samarium) and the telluride lattice make this compound of interest for mid-to-high temperature energy conversion and solid-state device research, though it remains largely experimental with limited industrial deployment compared to more established semiconductor families.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.360 | eV | — |