Ba2InSbSe5 is a quaternary chalcogenide semiconductor compound combining barium, indium, antimony, and selenium. This material belongs to the family of wide-bandgap semiconductors and is primarily investigated in research contexts for optoelectronic and photovoltaic applications where its bandgap and electronic structure offer potential advantages over more conventional semiconductors. The compound's layered structure and composition make it a candidate for infrared detection, scintillation, and solid-state radiation detection devices where sensitivity in specific wavelength ranges is critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.438 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.920 | eV | — | ||
| ↳ | 0.7160 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.265 | eV/atom | — |