Ba2InGdSe5

semiconductor

· Ba2InGdSe5

Ba2InGdSe5 is a quaternary semiconductor compound composed of barium, indium, gadolinium, and selenium, belonging to the rare-earth-doped chalcogenide semiconductor family. This is a research-stage material investigated primarily for infrared optoelectronic and photonic applications where rare-earth dopants enable tunable luminescence and nonlinear optical behavior. The combination of heavy elements and wide bandgap characteristics makes it a candidate for mid-to-far infrared detectors and emitters, areas where conventional semiconductors (GaAs, InP) have limitations.

infrared detectorsnonlinear optical devicesrare-earth photonicsscintillation materialsthermal imaging sensorsresearch/laboratory applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.240	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2InGdSe5

Electrical Properties

Regulatory Screening

Environmental

Export Control