Ba2InErTe5

semiconductor

· Ba2InErTe5

Ba2InErTe5 is a ternary/quaternary chalcogenide semiconductor compound combining barium, indium, erbium, and tellurium. This is a research-phase material studied for its potential optoelectronic and photovoltaic properties within the broader family of complex metal chalcogenides. As an experimental compound, it represents the ongoing effort to discover narrow-bandgap semiconductors with tailored electronic structures for infrared detection, thermal photovoltaics, and specialized solid-state device applications where rare-earth doping can engineer optical and electronic response.

infrared detectorsresearch semiconductorsphotovoltaic devicesrare-earth doping applicationsthermal imagingadvanced optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.350	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2InErTe5

Electrical Properties

Regulatory Screening

Environmental

Export Control