Ba2InErSe5 is a quaternary chalcogenide semiconductor compound containing barium, indium, erbium, and selenium. This is a research-phase material primarily investigated for its potential in infrared optics and photonic applications, leveraging the wide bandgap and transparency characteristics typical of selenide-based semiconductors. The inclusion of erbium, a rare earth element, positions this compound for exploration in nonlinear optical devices and mid-infrared emitters where rare-earth-doped semiconductors offer wavelength-selective functionality.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.290 | eV | — |