Ba2InDySe5 is a quaternary chalcogenide semiconductor compound combining barium, indium, dysprosium, and selenium elements. This is a research-phase material primarily investigated for optoelectronic and photovoltaic applications, particularly within the broader family of rare-earth-containing selenide semiconductors that offer tunable bandgaps and potential for infrared or mid-wavelength optical devices. Its incorporation of dysprosium—a lanthanide element—distinguishes it as a candidate for exploring how rare-earth doping influences electronic structure and light-matter interactions in multinary semiconductor systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.270 | eV | — |