Ba2InBiS5

semiconductor
· Ba2InBiS5

Ba₂InBiS₅ is a quaternary sulfide semiconductor compound combining barium, indium, and bismuth in a sulfide matrix, representing an emerging material in the ternary and quaternary chalcogenide family. This composition is primarily of research interest for optoelectronic and photovoltaic applications, where bismuth-containing sulfides are being explored as alternatives to conventional semiconductor systems due to their tunable bandgap and potential for non-toxic, earth-abundant device architectures. While not yet widely commercialized, materials in this class are attracting attention as candidates for thin-film solar cells, infrared detectors, and other solid-state devices where layered sulfide structures offer advantages in charge transport and light absorption.

experimental photovoltaic materialsinfrared optoelectronicsthin-film semiconductorsantimony/bismuth chalcogenide researchnon-toxic solar alternatives

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
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Density(ρ)
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Band Gap(Eg)2 entries
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N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
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Energy Above Hull(ΔEhull)
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Formation Energy(ΔHf)
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Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.