Ba2InBiS5
semiconductorBa₂InBiS₅ is a quaternary sulfide semiconductor compound combining barium, indium, and bismuth in a sulfide matrix, representing an emerging material in the ternary and quaternary chalcogenide family. This composition is primarily of research interest for optoelectronic and photovoltaic applications, where bismuth-containing sulfides are being explored as alternatives to conventional semiconductor systems due to their tunable bandgap and potential for non-toxic, earth-abundant device architectures. While not yet widely commercialized, materials in this class are attracting attention as candidates for thin-film solar cells, infrared detectors, and other solid-state devices where layered sulfide structures offer advantages in charge transport and light absorption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |