Ba2In2S5 is a ternary chalcogenide semiconductor compound composed of barium, indium, and sulfur, belonging to the family of metal sulfide semiconductors with potential for optoelectronic and photonic applications. This material is primarily investigated in research settings for its optical and electronic properties in thin-film and bulk form, offering potential advantages in infrared transparency, photocatalysis, or specialty optoelectronic devices where conventional semiconductors like GaAs or CdTe face limitations. Barium indium sulfides represent an emerging class of wide-bandgap semiconductors with tunable properties through composition control, making them candidates for next-generation photovoltaic, LED, or radiation detection applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.470 | eV | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data