Ba2In2S5

semiconductor

· Ba2In2S5

Ba2In2S5 is a ternary chalcogenide semiconductor compound composed of barium, indium, and sulfur, belonging to the family of metal sulfide semiconductors with potential for optoelectronic and photonic applications. This material is primarily investigated in research settings for its optical and electronic properties in thin-film and bulk form, offering potential advantages in infrared transparency, photocatalysis, or specialty optoelectronic devices where conventional semiconductors like GaAs or CdTe face limitations. Barium indium sulfides represent an emerging class of wide-bandgap semiconductors with tunable properties through composition control, making them candidates for next-generation photovoltaic, LED, or radiation detection applications.

infrared opticsphotocatalysisthin-film semiconductorsradiation detection researchoptoelectronic device developmentwide-bandgap semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.470	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2In2S5

Electrical Properties

Regulatory Screening

Environmental

Export Control