Ba₂GeTe₂Se₂ is a mixed-chalcogenide ceramic compound combining barium, germanium, tellurium, and selenium in a layered crystal structure. This is a research-stage material being investigated for optoelectronic and thermoelectric applications, where the combination of heavy elements and adjustable band gaps offers potential advantages over conventional semiconductors. The material family is of particular interest for mid-infrared photonics and solid-state energy conversion, though industrial adoption remains limited and ongoing studies focus on synthesis optimization and property characterization.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1893 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6600 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 8.448 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00430 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.280 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data