Ba2GeSe4 — Properties & Data | MatWorld

Ba2GeSe4

Name: Ba2GeSe4
Brand: MatWorld

ceramic

· JVASP-10877· Ba2GeSe4

Ba2GeSe4 is a quaternary chalcogenide ceramic compound belonging to the barium germanium selenide family, representing a research material in nonlinear optical and infrared photonic applications. This compound is investigated primarily for mid-infrared nonlinear optical devices and wide-bandgap semiconductor applications where its combination of chemical composition offers potential advantages in optical transparency windows and crystal symmetry properties. Engineers and researchers evaluate Ba2GeSe4 as an alternative to established infrared materials in specialized photonic systems where thermal stability, phase-matching capabilities, or specific refractive index characteristics become critical—though this remains largely an experimental compound rather than a production material.

infrared optics & photonicsnonlinear optical crystalswide-bandgap semiconductorsresearch & developmentquantum and mid-IR devicesspecialized detector systems

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1811	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)	1.260	eV	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)	7.014	-	DFT · OptB88vdW
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00110	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00216	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-158.4	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	220.8	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-1.420	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2GeSe4

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental