Ba2GdInTe5
semiconductor· Ba2GdInTe5
Ba2GdInTe5 is a quaternary chalcogenide semiconductor compound combining barium, gadolinium, indium, and tellurium elements. This material is primarily of research interest rather than established industrial production, investigated for its potential in infrared optics, thermoelectric applications, and solid-state radiation detection due to the heavy elements and wide bandgap characteristics typical of telluride-based semiconductors. Engineers would consider this compound family when exploring alternatives to conventional infrared materials or when seeking materials with combined thermal and electrical properties not easily achieved in simpler binary or ternary systems.
infrared optics and detectorsthermoelectric devicesradiation detectionresearch semiconductorschalcogenide materials
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
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