Ba2GdInTe5

semiconductor

· Ba2GdInTe5

Ba2GdInTe5 is a quaternary chalcogenide semiconductor compound combining barium, gadolinium, indium, and tellurium elements. This material is primarily of research interest rather than established industrial production, investigated for its potential in infrared optics, thermoelectric applications, and solid-state radiation detection due to the heavy elements and wide bandgap characteristics typical of telluride-based semiconductors. Engineers would consider this compound family when exploring alternatives to conventional infrared materials or when seeking materials with combined thermal and electrical properties not easily achieved in simpler binary or ternary systems.

infrared optics and detectorsthermoelectric devicesradiation detectionresearch semiconductorschalcogenide materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.360	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2GdInTe5

Electrical Properties

Regulatory Screening

Environmental

Export Control