Ba2GdGaSe5 is a quaternary chalcogenide semiconductor compound combining barium, gadolinium, gallium, and selenium—a research-phase material within the broader family of rare-earth selenide semiconductors. This compound is primarily investigated for infrared (IR) optoelectronic and nonlinear optical applications, where its wide bandgap and crystal structure may enable detection, modulation, or frequency conversion in the mid-to-long wavelength IR regime. While not yet commercialized at scale, materials in this selenide family are of growing interest as alternatives to conventional IR semiconductors where thermal stability, tunability, or specific wavelength response is critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.870 | eV | — |