Ba2GaSbTe5 is a quaternary chalcogenide semiconductor compound combining barium, gallium, antimony, and tellurium elements. This is a research-stage material being investigated for infrared optics and thermoelectric applications, where its bandgap and thermal properties position it as a candidate for mid-to-long wavelength infrared detection and energy conversion devices that currently rely on more established III-V or II-VI semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.660 | eV | — |