Ba2GaGeN

ceramic

· JVASP-56458· Ba2GaGeN

Ba₂GaGeN is a ternary nitride ceramic compound combining barium, gallium, and germanium elements in a crystalline structure. This material belongs to the family of wide-bandgap semiconductors and advanced ceramics, primarily studied in research contexts for optoelectronic and photonic applications. The barium-gallium-germanium-nitride system is of interest for potential use in high-temperature semiconductors, UV-emitting devices, and advanced photonic components where thermal stability and wide electronic bandgap are advantageous over conventional III-V nitrides.

wide-bandgap semiconductorsUV photonics (research)high-temperature electronics (emerging)nitride ceramic compoundsoptical device development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1894	lb/in³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	—
Formation Energy(ΔHf)	-0.7064	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2GaGeN

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental