Ba2GaGdTe5

semiconductor
· Ba2GaGdTe5

Ba2GaGdTe5 is a quaternary chalcogenide semiconductor compound combining barium, gallium, gadolinium, and tellurium in a mixed-anion crystal structure. This is a research-phase material studied primarily in solid-state chemistry and materials physics communities for its potential in infrared photonics and nonlinear optical applications, where the combination of heavy elements and chalcogenide bonding can enable wide bandgaps and strong light-matter interactions. The material belongs to the family of rare-earth-containing tellurides, which remain largely exploratory but are of interest for next-generation detectors, modulators, and frequency-conversion devices where conventional semiconductors reach performance limits.

infrared detectorsnonlinear opticsphotonic materials researchoptical modulatorsrare-earth semiconductorssolid-state chemistry

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

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