Ba2GaErTe5

semiconductor

· Ba2GaErTe5

Ba2GaErTe5 is a quaternary chalcogenide semiconductor compound containing barium, gallium, erbium, and tellurium. This is a research-phase material studied for its potential in infrared optics and solid-state photonics applications, particularly where rare-earth doping (erbium) offers luminescence or nonlinear optical properties. While not yet widely commercialized, materials in this chalcogenide family are explored as alternatives to conventional semiconductors for mid- to far-infrared sensing, lasing, and optical modulation where telluride-based compounds offer extended transparency windows and tunable bandgaps.

infrared optics and sensorsnonlinear optical devicessolid-state laser researchrare-earth photonicsexperimental semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.150	eV	—

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Regulatory Screening

Environmental

Export Control

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Ba2GaErTe5

Electrical Properties

Regulatory Screening

Environmental

Export Control