Ba2GaBiTe5

semiconductor

· Ba2GaBiTe5

Ba2GaBiTe5 is a quaternary chalcogenide semiconductor compound combining barium, gallium, bismuth, and tellurium elements. This is a research-phase material primarily investigated for mid-infrared optoelectronic and photonic applications, where its wide bandgap and telluride-based structure make it a candidate for nonlinear optical devices, infrared detectors, and potential thermoelectric systems. The material represents an emerging class of complex chalcogenides designed to optimize performance in wavelength ranges where conventional semiconductors (Si, GaAs) are transparent or opaque.

infrared detectorsnonlinear optical devicesmid-infrared photonicsthermoelectric researchspecialized optoelectronicsexperimental semiconductor compounds

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.430	eV	—

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Regulatory Screening

Environmental

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Ba2GaBiTe5

Electrical Properties

Regulatory Screening

Environmental

Export Control