Ba2Ga8SiS16

semiconductor

· Ba2Ga8SiS16

Ba2Ga8SiS16 is a quaternary semiconductor compound belonging to the sulfide-based semiconductor family, combining barium, gallium, silicon, and sulfur in a wide-bandgap structure. This material is primarily of research and development interest for optoelectronic and photonic applications, particularly in the ultraviolet to visible spectrum range where sulfide semiconductors offer advantages over traditional oxides. Its potential relevance lies in specialized photodetection, scintillation, or nonlinear optical devices, though industrial adoption remains limited compared to more mature compound semiconductors.

ultraviolet photodetectorsscintillation detectorsnonlinear opticswide-bandgap semiconductorsresearch photonic devicesradiation detection

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.400	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2Ga8SiS16

Electrical Properties

Regulatory Screening

Environmental

Export Control