Ba2Ga8GeS16

semiconductor

· Ba2Ga8GeS16

Ba2Ga8GeS16 is a quaternary chalcogenide semiconductor compound combining barium, gallium, germanium, and sulfur into a sulfide crystal structure. This is an experimental research material currently under investigation for infrared optical and photonic applications, rather than an established commercial compound. The sulfide semiconductor family is valued for wide transparency windows in the infrared spectrum and nonlinear optical properties, making Ba2Ga8GeS16 a candidate for infrared lenses, optical modulators, and potentially frequency conversion devices where wide bandgap semiconductors with tailored optical responses are needed.

infrared opticsnonlinear optical devicesresearch semiconductorsphotonic materialssulfide crystalswide-bandgap semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2Ga8GeS16

Electrical Properties

Regulatory Screening

Environmental

Export Control