Ba2Ga8GeS16
semiconductor· Ba2Ga8GeS16
Ba2Ga8GeS16 is a quaternary chalcogenide semiconductor compound combining barium, gallium, germanium, and sulfur into a sulfide crystal structure. This is an experimental research material currently under investigation for infrared optical and photonic applications, rather than an established commercial compound. The sulfide semiconductor family is valued for wide transparency windows in the infrared spectrum and nonlinear optical properties, making Ba2Ga8GeS16 a candidate for infrared lenses, optical modulators, and potentially frequency conversion devices where wide bandgap semiconductors with tailored optical responses are needed.
infrared opticsnonlinear optical devicesresearch semiconductorsphotonic materialssulfide crystalswide-bandgap semiconductors
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
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