Ba2ErGaTe5

semiconductor

· Ba2ErGaTe5

Ba2ErGaTe5 is a ternary chalcogenide semiconductor compound combining barium, erbium, gallium, and tellurium. This is a research-phase material studied primarily in the context of wide-bandgap semiconductors and potential optoelectronic applications, with structural and compositional properties typical of mixed-metal telluride systems that can exhibit interesting electronic or photonic behavior.

optoelectronic researchinfrared detectors (potential)photovoltaic developmentwide-bandgap semiconductorsmaterials characterizationlab-scale compound synthesis

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.150	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2ErGaTe5

Electrical Properties

Regulatory Screening

Environmental

Export Control