Ba₂ErGaSe₅ is a quaternary chalcogenide semiconductor compound combining barium, erbium, gallium, and selenium in a fixed stoichiometric ratio. This material belongs to the family of rare-earth-containing selenide semiconductors, which are primarily investigated in research settings for their potential infrared optoelectronic and photonic applications. The incorporation of erbium—a lanthanide element—positions this compound as a candidate material for mid-infrared emission and nonlinear optical devices, though it remains largely in the exploratory phase rather than established commercial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2049 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.950 | eV | — | ||
| ↳ | 1.674 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.744 | eV/atom | — |