Ba2ErGaSe5
semiconductor· Ba2ErGaSe5
Ba₂ErGaSe₅ is a quaternary chalcogenide semiconductor compound combining barium, erbium, gallium, and selenium in a fixed stoichiometric ratio. This material belongs to the family of rare-earth-containing selenide semiconductors, which are primarily investigated in research settings for their potential infrared optoelectronic and photonic applications. The incorporation of erbium—a lanthanide element—positions this compound as a candidate material for mid-infrared emission and nonlinear optical devices, though it remains largely in the exploratory phase rather than established commercial production.
infrared optoelectronics (research)nonlinear optical devicesrare-earth photonicssemiconductor researchmid-infrared emitters (development stage)
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | lb/in³ | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Magnetic Moment(μB) | — | µB | — | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
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