Ba2DyInTe5

semiconductor

· Ba2DyInTe5

Ba2DyInTe5 is a quaternary chalcogenide semiconductor compound combining barium, dysprosium, indium, and tellurium elements. This is a research-phase material studied for its potential in thermoelectric and infrared optoelectronic applications, where rare-earth doping (dysprosium) and mixed-metal compositions can enable tuned band gaps and phonon engineering for energy conversion or photonic devices.

thermoelectric power generationinfrared detectorsrare-earth semiconductor researchmid-infrared opticsenergy harvesting devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	5.987	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	1.350	eV	—
↳	0.6230	eV	—
Magnetic Moment(μB)	0.000	µB	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	—
Formation Energy(ΔHf)	-1.360	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2DyInTe5

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control