Ba2DyInTe5 is a quaternary chalcogenide semiconductor compound combining barium, dysprosium, indium, and tellurium elements. This is a research-phase material studied for its potential in thermoelectric and infrared optoelectronic applications, where rare-earth doping (dysprosium) and mixed-metal compositions can enable tuned band gaps and phonon engineering for energy conversion or photonic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.987 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.350 | eV | Measured | ||
| ↳ | 0.6230 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.360 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data