Ba2CeInTe5 is a mixed-metal telluride semiconductor compound containing barium, cerium, indium, and tellurium. This is a research-phase material primarily studied for potential optoelectronic and thermoelectric applications, representing the broader class of complex metal tellurides that combine multiple cation species to engineer band structure and thermal properties. The material is not currently established in high-volume industrial production but exemplifies the growing research interest in quaternary and higher-order telluride semiconductors as alternatives to binary compounds for energy conversion and photonic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.350 | eV | — |