Ba2BiInS5
semiconductorBa2BiInS5 is a quaternary chalcogenide semiconductor compound belonging to the family of mixed-metal sulfides, combining barium, bismuth, and indium cations in a sulfide lattice. This material is primarily of research and developmental interest rather than established industrial production, with potential applications in optoelectronic and photovoltaic devices where its bandgap and crystal structure properties could enable light absorption or emission in infrared to visible wavelengths. The combination of heavy elements (Bi, Ba) with a p-block metal (In) in a sulfide host offers opportunities for tunable electronic properties and potential use in next-generation solar cells, photodetectors, or nonlinear optical devices, though practical engineering adoption remains limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |