Ba2BiGaS5 is a quaternary semiconducting compound belonging to the metal sulfide family, combining barium, bismuth, and gallium in a sulfide lattice. This material is primarily of research and developmental interest for optoelectronic and photonic applications, particularly in the mid-infrared to infrared spectral range where chalcogenide semiconductors offer transparency advantages over conventional materials. Its layered structure and wide bandgap make it a candidate for nonlinear optical devices, photodetectors, and potentially thermophotovoltaic systems, though industrial deployment remains limited compared to mature semiconductors like GaAs or InP.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.380 | eV | — |