Ba23Ga8(SbS19)2

semiconductor

· Ba23Ga8(SbS19)2

Ba23Ga8(SbS19)2 is a complex mixed-metal chalcogenide semiconductor compound containing barium, gallium, and antimony sulfides in a layered crystal structure. This is an experimental material currently in research development, part of the broader family of thiospinels and sulfide-based semiconductors that show promise for photovoltaic, thermoelectric, and optoelectronic applications. The compound represents a strategy for engineering band gaps and carrier transport properties by combining multiple metal-sulfur coordination environments, offering potential advantages over simpler binary or ternary sulfides in tuning electronic and thermal properties for energy conversion devices.

experimental photovoltaicsthermoelectric devicessemiconductor researchsolar cellswide-bandgap electronicsmaterials exploration

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.840	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba23Ga8(SbS19)2

Electrical Properties

Regulatory Screening

Environmental

Export Control