Ba₂Zn₂Ge₂ is an intermetallic semiconductor compound belonging to the family of barium-containing chalcogenide and pnictide semiconductors. This is a research-stage material currently investigated for potential applications in thermoelectric devices and optoelectronic components, where the combination of barium, zinc, and germanium offers tunable electronic properties and potential band gap engineering advantages over conventional binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,114.2 | ksi | — | ||
Shear Modulus(G) | 4,257.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04080 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5680 | eV/atom | — |