Ba2 W2 N6

semiconductor

· Ba2 W2 N6

Ba₂W₂N₆ is an experimental transition metal nitride semiconductor compound combining barium, tungsten, and nitrogen in a ternary ceramic structure. This material belongs to the family of metal nitrides, which are being investigated for wide-bandgap semiconductor applications due to their potential for high-temperature stability and robust mechanical properties. While primarily a research material rather than an established commercial product, ternary nitrides like Ba₂W₂N₆ show promise for next-generation power electronics, photocatalysis, and high-temperature device applications where conventional semiconductors reach their limits.

experimental semiconductorswide-bandgap electronics researchhigh-temperature applicationsphotocatalysis and environmental remediationnitride compound developmentadvanced ceramics research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	113.4	GPa	—
Shear Modulus(G)	41.35	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.098	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.8500	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2 W2 N6

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control