Ba2 Tl1 Bi2 O7
semiconductorBa₂Tl₁Bi₂O₇ is an experimental mixed-metal oxide semiconductor compound combining barium, thallium, and bismuth in a pyrochlore-related structure. This material is primarily a research-phase compound investigated for its potential in photocatalysis, photovoltaic applications, and solid-state electronics, where the combination of heavy metal elements can produce favorable band gap engineering and charge-carrier properties. Engineers and researchers would evaluate this compound where novel semiconductors with tunable electronic properties or enhanced photocatalytic activity under visible light are needed, though its thallium content and lack of widespread industrial adoption mean applications remain largely in laboratory-scale development and fundamental materials studies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |