Ba₂Ti₃Al₁O₈ is a complex oxide ceramic semiconductor combining barium titanate and alumina components, synthesized primarily for advanced electronic and photonic applications. This material belongs to the perovskite-related oxide family and is of significant interest in materials research for tunable dielectric properties, photocatalysis, and potential ferroelectric behavior; it remains largely in the research and development phase rather than widespread industrial production, making it relevant to engineers exploring next-generation ceramic semiconductors for specialized high-temperature or functional ceramic applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000700 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.885 | eV/atom | — |