Ba2 Ti2 Tl1 O7
semiconductorBa₂Ti₂Tl₁O₇ is a mixed-metal oxide semiconductor compound belonging to the family of complex titanate ceramics with thallium doping. This material is primarily of research interest rather than established in production, studied for its potential in electronic and photonic applications where the combination of barium, titanium, and thallium oxides may enable tunable band gap properties or ferroelectric behavior. Engineers evaluating this compound should note it represents an experimental composition; similar undoped barium titanate systems are well-established in capacitors and piezoelectric devices, but thallium-containing variants require careful handling and environmental assessment due to thallium toxicity concerns.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |