Ba₂Te₆ is an experimental binary semiconductor compound composed of barium and tellurium, belonging to the chalcogenide family of materials. While not widely commercialized, this material is of research interest for its potential in thermoelectric applications and solid-state electronic devices due to the favorable electronic properties typical of barium telluride systems. Its development context suggests exploration for next-generation energy conversion and optoelectronic applications where mixed-valence semiconductors show promise.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,246.4 | ksi | — | ||
Shear Modulus(G) | 2,907.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7548 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9490 | eV/atom | — |