Ba2 Sn6

semiconductor

· Ba2 Sn6

Ba2Sn6 is an intermetallic semiconductor compound composed of barium and tin, belonging to the family of binary metal chalcogenides and related compounds investigated for electronic and photonic applications. This material remains primarily in the research and development phase, with interest driven by potential applications in semiconducting devices where tin-based intermetallics offer tailored band gaps and carrier properties. Ba2Sn6 represents an exploratory candidate for next-generation semiconductors, though industrial adoption is limited compared to mature alternatives like silicon or gallium arsenide.

experimental semiconductorsphotonic devices (research phase)thermoelectric materials (candidate)thin-film electronics researchmaterials exploration programs

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5070	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2 Sn6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control