Ba2 Pb4 I2 F10
semiconductorBa₂Pb₄I₂F₁₀ is a mixed halide perovskite-related semiconductor compound combining barium, lead, iodide, and fluoride ions in a layered or complex crystal structure. This is a research-phase material studied for next-generation optoelectronic and photovoltaic applications, representing an emerging class of halide compounds designed to improve stability, bandgap tunability, and radiation tolerance compared to conventional lead halide perovskites. The fluoride substitution and mixed-metal composition offer potential advantages in defect suppression and environmental durability, making it relevant for scientists exploring alternatives to standard methylammonium or cesium lead iodide perovskites in laboratory and prototype settings.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |