Ba2Ni2S4 is a layered chalcogenide semiconductor compound combining barium, nickel, and sulfur in a stoichiometric ratio. This is a research-phase material primarily investigated for its electronic band structure and potential optoelectronic properties, representing the broader class of transition-metal chalcogenides that exhibit semiconducting behavior. Interest in this compound stems from its layered crystal structure—similar to other chalcogenides used in photovoltaics and photodetection—and its potential for tunable band gaps in emerging thin-film device applications, though it remains largely in academic exploration rather than established commercial use.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00400 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.335 | eV/atom | — |