Ba₂Nb₂S₆ is a layered metal chalcogenide semiconductor composed of barium, niobium, and sulfur, belonging to the family of transition metal sulfides with two-dimensional structural characteristics. This is primarily a research material investigated for its potential in optoelectronic and photocatalytic applications due to its tunable band gap and layered crystal structure; it is not yet in widespread commercial use but represents the broader class of chalcogenide semiconductors being explored as alternatives to oxides in next-generation devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00410 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.617 | eV/atom | — |