Ba2 N12
semiconductorBa₂N₁₂ is an experimental nitrogen-rich ceramic compound belonging to the metal nitride family, synthesized primarily for advanced materials research rather than established commercial production. This material is of interest in the semiconductor and high-performance ceramics research community for its potential in extreme-condition applications, though it remains largely in the laboratory development phase. Engineers investigating novel nitride ceramics for high-hardness, thermally stable, or wide-bandgap semiconductor applications may evaluate this composition, though maturity and commercial availability are currently limited compared to established alternatives like cubic boron nitride or traditional metal nitrides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 40.61 | GPa | — | ||
Shear Modulus(G) | 13.77 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.829 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2370 | eV/atom | — |