Ba₂Mn₂C₂O₆F₄ is a mixed-valence barium-manganese oxide fluoride compound classified as a semiconductor, belonging to the family of transition metal oxyfluorides. This is a research-phase material rather than a commercial product; it represents an experimental composition of interest for investigating coupling between magnetic, electronic, and structural properties in layered oxide systems. The fluorine substitution and barium-manganese framework make it relevant to exploratory work in functional ceramics where tunable electronic properties or magnetically-active semiconducting behavior is desired.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 62.90 | GPa | — | ||
Shear Modulus(G) | 22.62 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.06370 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.459 | eV/atom | — |