Ba2 Mn2 As2 O1

semiconductor

· Ba2 Mn2 As2 O1

Ba₂Mn₂As₂O is a quaternary oxide semiconductor compound combining barium, manganese, and arsenic elements in a layered crystal structure. This is a research-phase material studied primarily for its electronic and magnetic properties rather than established commercial production; compounds in this family are investigated for potential applications in advanced electronics and magnetoelectronic devices where the interplay between magnetic and semiconducting behavior is exploited.

experimental semiconductorsmagnetic materials researchmagnetoelectronic devicessolid-state physicsthin-film researchfunctional ceramics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	5,498.5	ksi	—
Shear Modulus(G)	4,201.3	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01110	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.106	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2 Mn2 As2 O1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control