Ba2Mg2Te4O14 is a quaternary oxide semiconductor compound combining barium, magnesium, tellurium, and oxygen in a complex crystal structure. This material is primarily of research interest rather than established industrial use, investigated for potential optoelectronic and photonic applications due to its wide bandgap characteristics and mixed-metal oxide framework. It belongs to the family of tellurate semiconductors, which are explored for UV detection, nonlinear optics, and scintillation applications where traditional oxide semiconductors may fall short.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.961 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.946 | eV/atom | — |