Ba2Hf2N4 is a ceramic nitride semiconductor compound combining barium and hafnium elements in a crystalline structure. This material belongs to the family of transition metal nitrides and is primarily of research interest rather than established in high-volume industrial production. The compound is being investigated for potential applications in high-temperature semiconductors, refractory materials, and advanced electronic devices due to the thermal stability and hardness characteristics typical of hafnium-based ceramics, though practical engineering adoption remains limited to specialized research programs.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 16,605.2 | ksi | — | ||
Shear Modulus(G) | 7,424.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.298 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.552 | eV/atom | — |