Ba2 Hf1 O4
semiconductorBa₂Hf₁O₄ is a barium hafnium oxide ceramic compound belonging to the family of complex metal oxides with potential semiconductor properties. This material is primarily of research interest for high-temperature applications and advanced ceramics, where its thermal stability and structural rigidity make it a candidate for extreme environment components, though it remains relatively unexplored compared to established hafnium-based ceramics. Engineers would consider this composition for niche applications requiring materials that combine refractory behavior with electronic functionality, particularly in emerging fields such as solid-state electrolytes, thermal barrier coatings, or next-generation semiconductor devices operating at elevated temperatures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 17,222.4 | ksi | — | ||
Shear Modulus(G) | 9,428.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.476 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.412 | eV/atom | — |