Ba2 Ga8 S14

semiconductor

· Ba2 Ga8 S14

Ba2Ga8S14 is a barium gallium sulfide semiconductor compound belonging to the chalcogenide semiconductor family, characterized by a layered crystal structure combining wide bandgap properties with ionic bonding. This material is primarily investigated in research contexts for photonic and optoelectronic applications where wide bandgap semiconductors offer advantages in UV detection, nonlinear optical frequency conversion, and high-temperature device operation. Ba2Ga8S14 represents an emerging class of materials distinct from conventional III-V semiconductors, offering potential for specialized optical windows and radiation-hard detector applications where sulfide-based chemistry provides superior transparency in the infrared and mid-infrared regions compared to oxide alternatives.

UV photodetectorsNonlinear opticsInfrared optics windowsHigh-temperature semiconductorsRadiation-hard detectorsResearch/advanced materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.454	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.067	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2 Ga8 S14

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control