Ba2Ce2N4 is an experimental ceramic nitride compound belonging to the family of rare-earth and alkaline-earth metal nitrides, designed as a potential semiconductor material for advanced applications. This material is primarily under investigation in research settings for optoelectronic and high-temperature semiconductor applications, where its nitride chemistry offers potential advantages in thermal stability and wide bandgap characteristics compared to traditional oxide semiconductors. The material represents ongoing exploration in next-generation semiconductors for harsh environments and emerging device architectures, though commercial adoption remains limited pending further development and characterization.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 16,651.9 | ksi | — | ||
Shear Modulus(G) | 7,444.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7149 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.254 | eV/atom | — |