Ba₂BrN is an experimental ternary nitride semiconductor compound combining barium, bromine, and nitrogen. This material belongs to the emerging class of mixed-anion semiconductors, which are of interest in materials research for novel optoelectronic and electronic device applications. While not yet commercialized, compounds in this family are being investigated for potential use in high-energy-gap semiconductors and photovoltaic systems where traditional materials face limitations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,281.7 | ksi | — | ||
Shear Modulus(G) | 3,197.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.187 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.369 | eV/atom | — |